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PHD/PHU77NQ03T N-channel TrenchMOS FET Rev. 01 -- 28 November 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Fast switching I Low thermal resistance 1.3 Applications I DC-to-DC converters I Computer motherboard 1.4 Quick reference data I VDS 25 V I ID 75 A I RDSon 9.5 m I QGD = 3.2 nC (typ) 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1 gate (G) mb 2 drain (D) [1] mb 3 source (S) D mb mounting base; connected to drain (D) G 2 mbb076 S 1 3 1 2 3 SOT428 (DPAK) SOT533 (IPAK) [1] It is not possible to make a connection to pin 2 of the SOT428 package. NXP Semiconductors PHD/PHU77NQ03T N-channel TrenchMOS FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version PHD77NQ03T DPAK plastic single-ended surface-mounted package; 3 leads SOT428 (one lead cropped) PHU77NQ03T IPAK plastic single-ended package; 3 leads (in-line) SOT533 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions